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this is information on a product in full production. july 2013 doc id 13476 rev 4 1/21 std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n n-channel 650 v, 0.425 typ., 11 a mdmesh?ii power mosfet in dpak, to-220fp, i2pakfp and to-220 packages datasheet - production data figure 1. internal schematic diagram features ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance applications ? switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. dpak 1 3 tab 1 2 3 ta b to-220 1 2 3 to-220fp i2pakfp 1 2 3 $0y '7$% * 6 order codes v dss @ t jmax r ds(on) max i d std11nm65n 710 v < 0.455 11 a STF11NM65N stfi11nm65n stp11nm65n table 1. device summary order codes marking packages packaging std11nm65n 11nm65n dpak tape and reel STF11NM65N to-220fp tube stfi11nm65n i2pakfp stp11nm65n to-220 www.st.com
contents std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n 2/21 doc id 13476 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
doc id 13476 rev 4 3/21 std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n electrical ratings 21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, dpak to-220fp i2pakfp v ds drain-source voltage 650 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 11 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 7 7 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 44 44 (1) a p tot total dissipation at t c = 25 c 110 25 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 3a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 147 mj dv/dt (3) 3. i sd 11 a, di/dt 400 a/ s; v peak < v (br)dss, v dd 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak to-220fp i2pakfp to-220 r thj-case thermal resistance junction-case max 1.14 5 1.14 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w
electrical characteristics std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n 4/21 doc id 13476 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 5.5 a 0.425 0.455 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 -800- pf pf pf c oss output capacitance - 50 - pf c rss reverse transfer capacitance -2.9-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 520 v, v gs = 0 - 133 - pf r g intrinsic gate resistance f = 1 mhz open drain - 4.2 - q g total gate charge v dd = 520 v, i d = 11 a, v gs = 10 v (see figure 19 ) -29-nc q gs gate-source charge - 3.9 - nc q gd gate-drain charge - 16 - nc
doc id 13476 rev 4 5/21 std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n electrical characteristics 21 table 6. switching times symbol parameter test conditions min. typ. max. unit t d (on) turn-on delay time v dd = 325 v, i d = 5.5 a, r g = 4.7 , v gs = 10 v (see figure 20 and figure 23 ) -15.5-ns t r rise time - 10.8 - ns t d(off) turn-off delay time - 11 - ns t f fall time - 47 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 11 44 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 11 a, di/dt = 100 a/ s v dd = 60 v (see figure 23 ) - 418 ns q rr reverse recovery charge - 4.4 c i rrm reverse recovery current - 21 a t rr reverse recovery time i sd = 11 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c (see figure 23 ) - 530 ns q rr reverse recovery charge - 5.6 c i rrm reverse recovery current - 21 a
electrical characteristics std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n 6/21 doc id 13476 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak figure 3. thermal impedance for dpak figure 4. safe operating area for to-220fp and i2pakfp figure 5. thermal impedance for to-220fp and i2pakfp figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am13041v1 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 am13040v1 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am13039v1
doc id 13476 rev 4 7/21 std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n electrical characteristics 21 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 15 10 5 0 0 10 v ds (v) 20 (a) 5 15 25 20 5v 6v v gs =10v am13042v1 i d 15 10 5 0 0 4 v gs (v) 8 (a) 2 6 20 v ds =21v am13043v1 v gs 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =520v i d =11a 25 12 300 200 100 0 400 500 v ds v ds (v) 30 am13044v1 r ds(on) 0.410 0.400 0 4 i d (a) ( ) 2 6 0.420 0.430 v gs =10v 8 10 0.440 am13045v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am13046v1 e oss 3 2 1 0 0 100 v ds (v) (j) 400 4 200 300 500 600 5 am13047v1
electrical characteristics std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n 8/21 doc id 13476 rev 4 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a am13048v1 r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 i d =5.5a am13049v1 v sd 0 4 i sd (a) (v) 2 10 6 8 0.4 0.6 0.8 1.0 t j =-50c t j =150c t j =25c 1.2 am13050v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.02 1.04 1.06 i d =1ma 1.08 1.10 am09028v1
doc id 13476 rev 4 9/21 std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n test circuits 21 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n 10/21 doc id 13476 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l 1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
doc id 13476 rev 4 11/21 std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n package mechanical data 21 figure 24. dpak (to-252) drawing figure 25. dpak footprint (a) a. all dimension are in millimeters 0068772_i 6.7 1.6 1.6 2.3 2.3 6.7 1.8 3 am08850v1
package mechanical data std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n 12/21 doc id 13476 rev 4 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
doc id 13476 rev 4 13/21 std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n package mechanical data 21 figure 26. to-220fp drawing 7012510_rev_k_b
package mechanical data std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n 14/21 doc id 13476 rev 4 table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b 2.50 2.70 d 2.50 2.75 d1 0.65 0.85 e 0.45 0.70 f 0.75 1.00 f1 1.20 g 4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50
doc id 13476 rev 4 15/21 std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n package mechanical data 21 figure 27. i 2 pakfp (to-281) drawing uhy$
package mechanical data std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n 16/21 doc id 13476 rev 4 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
doc id 13476 rev 4 17/21 std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n package mechanical data 21 figure 28. to-220 type a drawing bw\sh$b5hyb7
packaging mechanical data std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n 18/21 doc id 13476 rev 4 5 packaging mechanical data table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e1.65 1.85n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t0.25 0.35 w15.7 16.3
doc id 13476 rev 4 19/21 std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n packaging mechanical data 21 figure 29. tape figure 30. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n 20/21 doc id 13476 rev 4 6 revision history table 13. document revision history date revision changes 01-jun-2007 1 first release. 03-oct-2007 2 added device in d 2 pak and updated figure 12: capacitance variations 20-jul-2012 3 document status promoted from preliminary to production data. updated section 4: package mechanical data and section 5: packaging mechanical data . minor text changes. 15-jul-2013 4 updated table 1: device summary and section 4: package mechanical data .
doc id 13476 rev 4 21/21 std11nm65n, STF11NM65N, stfi11nm65n, stp11nm65n 21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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